Publications

Found 112 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Title is D  [Clear All Filters]
2007
Schmidt, M. C., K-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of nonpolar m-plane InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 3L: IOP Publishing, pp. L190, 2007.
2006
Chakraborty, A., KC. Kim, F. Wu, JS. Speck, SP. DenBaars, and UK. Mishra, "Defect reduction in nonpolar a-plane GaN films using in situ Si N x nanomask", Applied physics letters, vol. 89, no. 4: AIP, pp. 041903, 2006.
Zhou, X., ET. Yu, DS. Green, and JS. Speck, "Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 1: AVS, pp. 245–249, 2006.
Kamber, D. S., Y. Wu, B. A. Haskell, S. Newman, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy", Journal of crystal growth, vol. 297, no. 2: Elsevier, pp. 321–325, 2006.
2003
Haskell, BA., F. Wu, MD. Craven, S. Matsuda, PT. Fini, T. Fujii, K. Fujito, SP. DenBaars, JS. Speck, and S. Nakamura, "Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy", Applied physics letters, vol. 83, no. 4: AIP, pp. 644–646, 2003.
Wu, Y., JP. Zhang, GS. Cheng, M. Moskovits, and JS. Speck, "Defect Structure of Mg-Doped GaN Nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 344–345, 2003.
Ringel, SA., A. Armstrong, A. Arehart, B. Moran, U. K. Mishra, and JS. Speck, "Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy", Compound Semiconductors, 2003. International Symposium on: IEEE, pp. 4–5, 2003.
Zhang, JP., Y. Wu, GS. Cheng, M. Moskovits, and JS. Speck, "Dislocation-free GaN nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 342–343, 2003.
2001
A Andrews, M., JS. Speck, AE. Romanov, M. Bobeth, and W. Pompe, "Development of cross-hatch morphology during growth of lattice mismatched layers", MRS Online Proceedings Library Archive, vol. 673: Cambridge University Press, 2001.
Liu, Y., B. Acikeia, A. S. Nagra, T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "Distributed phase shifters using (Ba, Sr) TiO3 thin films on sapphire and glass substrates", Integrated Ferroelectrics, vol. 39, no. 1-4: Taylor & Francis, pp. 313–320, 2001.
2000
Hierro, A., D. Kwon, SA. Ringel, M. Hansen, UK. Mishra, SP. DenBaars, and JS. Speck, "Deep levels in n-type Schottky and p+-n homojunction GaN diodes", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 922–928, 2000.
Fini, P., H. Marchand, JP. Ibbetson, SP. DenBaars, UK. Mishra, and JS. Speck, "Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction", Journal of crystal growth, vol. 209, no. 4: Elsevier, pp. 581–590, 2000.
Keller, S., G. Parish, JS. Speck, SP. DenBaars, and UK. Mishra, "Dislocation reduction in GaN films through selective island growth of InGaN", Applied Physics Letters, vol. 77, no. 17: AIP, pp. 2665–2667, 2000.
1999
Abare, AC., M. Hansen, JS. Speck, LA. Coldren, and SP. DenBaars, "Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings", Device Research Conference Digest, 1999 57th Annual: IEEE, pp. 198–199, 1999.
Heying, B., EJ. Tarsa, CR. Elsass, P. Fini, SP. DenBaars, and JS. Speck, "Dislocation mediated surface morphology of GaN", Journal of Applied Physics, vol. 85, no. 9: AIP, pp. 6470–6476, 1999.
Romanov, AE., A. Vojta, W. Pompe, MJ. Lefevre, and JS. Speck, "Domain patterns in (111) oriented tetragonal ferroelectric films", physica status solidi (a), vol. 172, no. 1: WILEY-VCH Verlag Berlin, pp. 225–253, 1999.

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