Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries

TitleDependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries
Publication TypeJournal Article
Year of Publication2006
AuthorsZhou, X., ET. Yu, DS. Green, and JS. Speck
JournalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Volume24
Pagination245–249