| Title | Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing |
| Publication Type | Journal Article |
| Year of Publication | 2004 |
| Authors | Yu, H., L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra |
| Journal | Applied physics letters |
| Volume | 85 |
| Pagination | 5254–5256 |