Publications

Found 158 results
Author Title Type [ Year(Desc)]
Filters: Author is Mishra, Umesh K  [Clear All Filters]
2012
Iza, M., C. J. Neufeld, S. C. Cruz, R. M. Farrell, J. S. Speck, S. Nakamura, S. P. DenBaars, and U. K. Mishra, Textured iii-v semiconductor, may # " 3", 2012.
2013
Mazumder, B., S. W. Kaun, J. Lu, S. Keller, U. K. Mishra, and J. S. Speck, "Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 102, no. 11: AIP, pp. 111603, 2013.
Mazumder, B., S. W. Kaun, J. Lu, S. Keller, U. K. Mishra, and J. S. Speck, "Atom probe characterization of an AlN interlayer within HEMT structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition", Bulletin of the American Physical Society, vol. 58: American Physical Society, 2013.
Schaake, C. A., D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and U. K. Mishra, "A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency", Semiconductor Science and Technology, vol. 28, no. 10: IOP Publishing, pp. 105021, 2013.
Dasgupta, S., J. Lu, A. Raman, C. Hurni, G. Gupta, J. S. Speck, U. K. Mishra, and others, "Estimation of hot electron relaxation time in gan using hot electron transistors", Applied Physics Express, vol. 6, no. 3: IOP Publishing, pp. 034002, 2013.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition, 2013.
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Field-effect transistor with compositionally graded nitride layer on a silicaon substrate, 2013.
Keller, S., R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
Kaun, S. W., M. Hoi Wong, U. K. Mishra, and J. S. Speck, "Molecular beam epitaxy for high-performance Ga-face GaN electron devices", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074001, 2013.
2014
Mazumder, B., X. Liu, R. Yeluri, F. Wu, U. K. Mishra, and J. S. Speck, "Atom probe tomography studies of Al2O3 gate dielectrics on GaN", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 134101, 2014.
Ahmadi, E., H. Chalabi, S. W. Kaun, R. Shivaraman, J. S. Speck, and U. K. Mishra, "Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 133702, 2014.
Ahmadi, E., R. Shivaraman, F. Wu, S. Wienecke, S. W. Kaun, S. Keller, J. S. Speck, and U. K. Mishra, "Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime", Applied Physics Letters, vol. 104, no. 7: AIP, pp. 072107, 2014.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition, 2014.
Kaun, S. W., E. Ahmadi, B. Mazumder, F. Wu, E. C. H. Kyle, P. G. Burke, U. K. Mishra, and J. S. Speck, "GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 29, no. 4: IOP Publishing, pp. 045011, 2014.
Chakraborty, A., K-C. Kim, J. S. Speck, S. P. DenBaars, and U. K. Mishra, In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In) N, 2014.
Yeluri, R., J. Lu, D. Browne, C. A. Hurni, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers", Device Research Conference (DRC), 2014 72nd Annual: IEEE, pp. 253–254, 2014.
Hurni, C. A., H. Kroemer, U. K. Mishra, and J. S. Speck, "m-plane (10 1\= 0) and (20 2\= 1) GaN/AlxGa1–xN conduction band offsets measured by capacitance-voltage profiling", Applied Physics Letters, vol. 105, no. 23: AIP Publishing, pp. 232108, 2014.
Jr, R. M. Farrell, T. J. Baker, A. Chakraborty, B. A. Haskell, M. P Pattison, R. Sharma, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., Technique for the growth and fabrication of semipolar (Ga, Al, In, B) N thin films, heterostructures, and devices, 2014.
2015
Fireman, M. N., D. A. Browne, B. Mazumder, J. S. Speck, and U. K. Mishra, "Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy", Applied Physics Letters, vol. 106, no. 20: AIP Publishing, pp. 202106, 2015.
Yeluri, R., J. Lu, C. A. Hurni, D. A. Browne, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction", Applied Physics Letters, vol. 106, no. 18: AIP Publishing, pp. 183502, 2015.
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Method of controlling stress in group-III nitride films deposited on substrates, sep # " 8", 2015.
Ahmadi, E., F. Wu, H. Li, S. W. Kaun, M. Tahhan, K. Hestroffer, S. Keller, J. S. Speck, and U. K. Mishra, "N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055012, 2015.
Kaun, S. W., B. Mazumder, M. N. Fireman, E. C. H. Kyle, U. K. Mishra, and J. S. Speck, "Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055010, 2015.
Hestroffer, K., F. Wu, H. Li, C. Lund, S. Keller, J. S. Speck, and U. K. Mishra, "Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105015, 2015.
2016
Fireman, M. N., D. A. Browne, U. K. Mishra, and J. S. Speck, "Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy", Journal of Applied Physics, vol. 119, no. 5: AIP Publishing, pp. 055709, 2016.

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