| Title | N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates |
| Publication Type | Journal Article |
| Year of Publication | 2015 |
| Authors | Ahmadi, E., F. Wu, H. Li, S. W. Kaun, M. Tahhan, K. Hestroffer, S. Keller, J. S. Speck, and U. K. Mishra |
| Journal | Semiconductor Science and Technology |
| Volume | 30 |
| Pagination | 055012 |