| Title | GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy |
| Publication Type | Journal Article |
| Year of Publication | 2014 |
| Authors | Kaun, S. W., E. Ahmadi, B. Mazumder, F. Wu, E. C. H. Kyle, P. G. Burke, U. K. Mishra, and J. S. Speck |
| Journal | Semiconductor Science and Technology |
| Volume | 29 |
| Pagination | 045011 |