Publications

Found 89 results
Author Title Type [ Year(Asc)]
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2012
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. S. Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, may # " 29", 2012.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, NON-POLAR (Al, B, In, Ga) N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES, 2012.
2011
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
Fujiwara, T., R. Yeluri, D. Denninghoff, J. Lu, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 096501, 2011.
Keller, S., Y. Dora, S. Chowdhury, F. Wu, X. Chen, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2086–2088, 2011.
Chung, R. B., F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Growth study and impurity characterization of AlxIn1- xN grown by metal organic chemical vapor deposition", Journal of Crystal Growth, vol. 324, no. 1: North-Holland, pp. 163–167, 2011.
Matioli, E., C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, et al., "High internal and external quantum efficiency InGaN/GaN solar cells", Applied Physics Letters, vol. 98, no. 2: AIP, pp. 021102, 2011.
Farrell, R. M., C. J. Neufeld, S. C. Cruz, J. R. Lang, M. Iza, S. Keller, S. Nakamura, SP. DenBaars, UK. Mishra, and JS. Speck, "High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm", Applied Physics Letters, vol. 98, no. 20: AIP, pp. 201107, 2011.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, 2011.
Denninghoff, D., S. Dasgupta, J. Lu, D. Brown, S. Keller, J. Speck, and U. Mishra, "N-Polar GaN HEMTs Grown by MBE and MOCVD with fmax of 255 and 250 GHz, Respectively", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Dasgupta, S., S. Keller, J. S. Speck, U. K. Mishra, and others, "N-Polar GaN/AlN MIS-HEMT With $ f_ ${$$\backslash$rm MAX$}$ $ of 204 GHz for Ka-Band Applications", IEEE Electron Device Letters, vol. 32, no. 12: IEEE, pp. 1683–1685, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells", Applied Physics Letters, vol. 99, no. 7: AIP, pp. 071104, 2011.
Dasgupta, S., D. F. Brown, U. Singisetti, S. Keller, J. S. Speck, U. K. Mishra, and others, "Self-aligned technology for N-polar GaN/Al (Ga) N MIS-HEMTs", IEEE Electron Device Letters, vol. 32, no. 1: IEEE, pp. 33–35, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Semiconductors, dielectrics, and organic materials-101001 Temperature Dependent Capacitance-Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82 In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10R: IOP Publishing, pp. 101001, 2011.
2010
Brown, D. F., S. Keller, T. E. Mates, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 107, no. 3: AIP, pp. 033509, 2010.
Fujiwara, T., S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Low ohmic contact resistance m-plane AlGaN/GaN heterojunction field-effect transistors with enhancement-mode operations", Applied physics express, vol. 3, no. 10: IOP Publishing, pp. 101002, 2010.
Dasgupta, S., Y. Pei, B. L. Swenson, S. Keller, J. S. Speck, U. K. Mishra, and others, "N-polar GaN/AlN MIS-HEMT for Ka-band power applications", IEEE Electron Device Letters, vol. 31, no. 12: IEEE, pp. 1437–1439, 2010.
Mishra, U. K., M. Hoi Wong, S. Dasgupta, D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and others, "N-polar GaN-based MIS-HEMTs for mixed signal applications", Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International: IEEE, pp. 1130–1133, 2010.
Dasgupta, S., D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others, "T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art f MAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs", Device Research Conference (DRC), 2010: IEEE, pp. 155–156, 2010.
Dasgupta, S., Nidhi, D. F. Brown, F. Wu, S. Keller, J. S. Speck, and U. K. Mishra, "Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth", Applied physics letters, vol. 96, no. 14: AIP, pp. 143504, 2010.
2009
Fujiwara, T., S. Rajan, S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors", Applied Physics Express, vol. 2, no. 1: IOP Publishing, pp. 011001, 2009.
Dasgupta, S., Y. Pei, B. L. Swenson, D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others, "$ f_ ${$T$}$ $ and $ f_ ${$$\backslash$rm MAX$}$ $ of 47 and 81 GHz, Respectively, on N-Polar GaN/AlN MIS-HEMT", IEEE Electron Device Letters, vol. 30, no. 6: IEEE, pp. 599–601, 2009.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition, 2009.
Matioli, E., M. Iza, Y-S. Choi, F. Wu, S. Keller, H. Masui, E. Hu, J. Speck, and C. Weisbuch, "GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.

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