Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82In0. 18N Grown on GaN

TitleTemperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82In0. 18N Grown on GaN
Publication TypeJournal Article
Year of Publication2011
AuthorsChung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura
JournalJapanese Journal of Applied Physics
Volume50
Pagination101001