T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art f MAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs

TitleT-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art f MAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs
Publication TypeConference Paper
Year of Publication2010
AuthorsDasgupta, S., D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others
Conference NameDevice Research Conference (DRC), 2010
PublisherIEEE