N-polar GaN/AlN MIS-HEMT for Ka-band power applications

TitleN-polar GaN/AlN MIS-HEMT for Ka-band power applications
Publication TypeJournal Article
Year of Publication2010
AuthorsDasgupta, S., Y. Pei, B. L. Swenson, S. Keller, J. S. Speck, U. K. Mishra, and others
JournalIEEE Electron Device Letters
Volume31
Pagination1437–1439