Publications

Found 14 results
Author Title Type [ Year(Asc)]
Filters: Author is Pei, Yi  [Clear All Filters]
2010
Wong, M. Hoi, Y. Pei, D. Brown, J. S. Speck, U. K. Mishra, M. L. Schuette, H. Kim, V. Balasubramanian, and W. Lu, "N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 189–192, 2010.
Dasgupta, S., Y. Pei, B. L. Swenson, S. Keller, J. S. Speck, U. K. Mishra, and others, "N-polar GaN/AlN MIS-HEMT for Ka-band power applications", IEEE Electron Device Letters, vol. 31, no. 12: IEEE, pp. 1437–1439, 2010.
Yang, C. Kai, P. Roblin, F. De Groote, S. A. Ringel, S. Rajan, J. Pierre Teyssier, C. Poblenz, Y. Pei, J. Speck, and U. K. Mishra, "Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer", IEEE transactions on microwave theory and techniques, vol. 58, no. 5: IEEE, pp. 1077–1088, 2010.
2009
Suh, I., P. Roblin, Y. Ko, C-K. Yang, A. Malonis, A. Arehart, S. Ringel, C. Poblenz, Y. Pei, J. Speck, et al., "Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source", Microwave Measurement Symposium, 2009 74th ARFTG: IEEE, pp. 1–5, 2009.
Yang, C-K., P. Roblin, A. Malonis, A. Arehart, S. Ringel, C. Poblenz, Y. Pei, J. Speck, and U. Mishra, "Characterization of traps in AlGaN/GaN HEMTs with a combined large signal network analyzer/deep level optical spectrometer system", Microwave Symposium Digest, 2009. MTT'09. IEEE MTT-S International: IEEE, pp. 1209–1212, 2009.
Dasgupta, S., Y. Pei, B. L. Swenson, D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others, "$ f_ ${$T$}$ $ and $ f_ ${$$\backslash$rm MAX$}$ $ of 47 and 81 GHz, Respectively, on N-Polar GaN/AlN MIS-HEMT", IEEE Electron Device Letters, vol. 30, no. 6: IEEE, pp. 599–601, 2009.
Wong, M. Hoi, Y. Pei, D. F. Brown, S. Keller, J. S. Speck, and U. K. Mishra, "High performance MBE-grown N-face microwave GaN HEMTs with> 70% PAE", Device Research Conference, 2009. DRC 2009: IEEE, pp. 157–158, 2009.
Wong, M. Hoi, Y. Pei, J. S. Speck, and U. K. Mishra, "High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation", Applied Physics Letters, vol. 94, no. 18: AIP, pp. 182103, 2009.
Wong, M. Hoi, Y. Pei, D. F. Brown, S. Keller, J. S. Speck, and U. K. Mishra, "High-performance N-face GaN microwave MIS-HEMTs with> 70% power-added efficiency", IEEE Electron Device Letters, vol. 30, no. 8: IEEE, pp. 802–804, 2009.
2008
Chu, R., C. Poblenz, M. Hoi Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. Shen, J. S. Speck, and U. K. Mishra, "Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061101, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-face metal–insulator–semiconductor high-electron-mobility transistors with AlN back-barrier", IEEE Electron Device Letters, vol. 29, no. 10: IEEE, pp. 1101–1104, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier", Device Research Conference, 2008: IEEE, pp. 201–202, 2008.
Chu, R., C. Poblenz, M. Hoi Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. Shen, J. S. Speck, and U. K. Mishra, "Semiconductor, superconductor, spintronic, dielectric, and organic materials-Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied Physics Express, vol. 1, no. 6, pp. 61101, 2008.
2007
Wong, M. Hoi, Y. Pei, T. Palacios, L. Shen, A. Chakraborty, L. S. McCarthy, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth", Applied Physics Letters, vol. 91, no. 23: AIP, pp. 232103, 2007.