High-performance N-face GaN microwave MIS-HEMTs with> 70% power-added efficiency

TitleHigh-performance N-face GaN microwave MIS-HEMTs with> 70% power-added efficiency
Publication TypeJournal Article
Year of Publication2009
AuthorsWong, M. Hoi, Y. Pei, D. F. Brown, S. Keller, J. S. Speck, and U. K. Mishra
JournalIEEE Electron Device Letters
Volume30
Pagination802–804