| Title | High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation |
| Publication Type | Journal Article |
| Year of Publication | 2009 |
| Authors | Wong, M. Hoi, Y. Pei, J. S. Speck, and U. K. Mishra |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Pagination | 182103 |