Publications

Found 8 results
Author Title Type [ Year(Asc)]
Filters: Author is Chu, Rongming  [Clear All Filters]
2008
Koblmüller, G., R. Chu, F. Wu, U. K. Mishra, and J. S. Speck, "Dislocation reduction in AlGaN/GaN heterostructures on 4H-SiC by molecular beam epitaxy in the thermal decomposition regime", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061103, 2008.
Chu, R., C. Poblenz, M. Hoi Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. Shen, J. S. Speck, and U. K. Mishra, "Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061101, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-face metal–insulator–semiconductor high-electron-mobility transistors with AlN back-barrier", IEEE Electron Device Letters, vol. 29, no. 10: IEEE, pp. 1101–1104, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier", Device Research Conference, 2008: IEEE, pp. 201–202, 2008.
Chu, R., C. Poblenz, M. Hoi Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. Shen, J. S. Speck, and U. K. Mishra, "Semiconductor, superconductor, spintronic, dielectric, and organic materials-Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied Physics Express, vol. 1, no. 6, pp. 61101, 2008.
2007
Chu, R., C. Soo Suh, M. Hoi Wong, N. Fichtenbaum, D. Brown, L. McCarthy, S. Keller, F. Wu, J. S. Speck, and U. K. Mishra, "Impact of $$\backslash$hbox ${$CF$}$ _ ${$4$}$ $ Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9: IEEE, pp. 781–783, 2007.
Poblenz, C., A. L. Corrion, F. Recht, C. Soo Suh, R. Chu, L. Shen, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz", IEEE Electron Device Letters, vol. 28, no. 11: IEEE, pp. 945–947, 2007.
Chu, R., L. Shen, N. Fichtenbaum, S. Keller, A. Corrion, C. Poblenz, J. Speck, and U. Mishra, "Surface treatment for leakage reduction in AlGaN/GaN HEMTs", Device Research Conference, 2007 65th Annual: IEEE, pp. 127–128, 2007.