Dislocation reduction in AlGaN/GaN heterostructures on 4H-SiC by molecular beam epitaxy in the thermal decomposition regime

TitleDislocation reduction in AlGaN/GaN heterostructures on 4H-SiC by molecular beam epitaxy in the thermal decomposition regime
Publication TypeJournal Article
Year of Publication2008
AuthorsKoblmüller, G., R. Chu, F. Wu, U. K. Mishra, and J. S. Speck
JournalApplied physics express
Volume1
Pagination061103