Publications

Found 914 results
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2020
Itoh, T., A. Mauze, Y. Zhang, and J. S. Speck, "Epitaxial growth of β-Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 117, pp. 152105, 2020.
Wurm, C., E. Ahmadi, F. Wu, N. Hatui, S. Keller, J. Speck, and U. Mishra, "Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy", Solid State Communications, vol. 305, pp. 113763, 2020.
Alema, F., Y. Zhang, A. Mauze, T. Itoh, J. S. Speck, B. Hertog, and A. Osinsky, "H2O vapor assisted growth of β-Ga2O3 by MOCVD", AIP Advances, vol. 10, pp. 085002, 2020.
Alias, E. A., M. E. A. Samsudin, N. Ibrahim, A. J. Mughal, S. P. DenBaars, J. S. Speck, S. Nakamura, and N. Zainal, "Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate", J. Opt. Soc. Am. B, vol. 37, pp. 1614–1619, Jun, 2020.
Alema, F., Y. Zhang, A. Osinsky, N. Orishchin, N. Valente, A. Mauze, and J. S. Speck, "Low 10^14  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD", APL Materials, vol. 8, pp. 021110, 2020.
Marcinkevičius, S., R. Yapparov, L. Y. Kuritzky, Y-R. Wu, S. Nakamura, and J. S. Speck, "Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport", Phys. Rev. B, vol. 101, pp. 075305, Feb, 2020.
Mauze, A., Y. Zhang, T. Itoh, F. Wu, and J. S. Speck, "Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy", APL Materials, vol. 8, pp. 021104, 2020.
Yuan, C., Y. Zhang, R. Montgomery, S. Kim, J. Shi, A. Mauze, T. Itoh, J. S. Speck, and S. Graham, "Modeling and analysis for thermal management in gallium oxide field-effect transistors", Journal of Applied Physics, vol. 127, pp. 154502, 2020.
Yuan, C., Y. Zhang, R. Montgomery, S. Kim, J. Shi, A. Mauze, T. Itoh, J. S. Speck, and S. Graham, "Modeling and analysis for thermal management in gallium oxide field-effect transistors", Journal of Applied Physics, vol. 127, pp. 154502, 2020.
Yapparov, R., C. Lynsky, S. Nakamura, J. S. Speck, and S. Marcinkevičius, "Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination", Applied Physics Express, vol. 13, pp. 122005, nov, 2020.
Farzana, E., J. Wang, M. Monavarian, T. Itoh, K. S. Qwah, Z. J. Biegler, K. F. Jorgensen, and J. S. Speck, "Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy", IEEE Electron Device Letters, vol. 41, pp. 1806-1809, 2020.
Monavarian, M., J. Xu, M. N. Fireman, N. Nookala, F. Wu, B. Bonef, K. S. Qwah, E. C. Young, M. A. Belkin, and J. S. Speck, "Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions", Applied Physics Letters, vol. 116, pp. 201103, 2020.
Lheureux, G., M. Monavarian, R. Anderson, R. A. Decrescent, J. Bellessa, C. Symonds, J. A. Schuller, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics", Opt. Express, vol. 28, pp. 17934–17943, Jun, 2020.
Qwah, K. S., M. Monavarian, G. Lheureux, J. Wang, Y.-R. Wu, and J. S. Speck, "Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder", Applied Physics Letters, vol. 117, pp. 022107, 2020.
Marcinkevičius, S., and J. S. Speck, "Ultrafast dynamics of hole self-localization in β-Ga2O3", Applied Physics Letters, vol. 116, pp. 132101, 2020.
Yapparov, R., Y. Chao Chow, C. Lynsky, F. Wu, S. Nakamura, J. S. Speck, and S. Marcinkevičius, "Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells", Journal of Applied Physics, vol. 128, pp. 225703, 2020.
Zhang, Y., A. Mauze, F. Alema, A. Osinsky, T. Itoh, and J. S. Speck, "β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels", Japanese Journal of Applied Physics, vol. 60, pp. 014001, dec, 2020.
2019
Mauze, A., Y. Zhang, and J. Speck, "(010) β-Ga2O3 Metal Oxide Catalyzed Epitaxy (MOCATAXY) growth and Sn doping in plasma-assisted molecular beam epitaxy", 2019 Compound Semiconductor Week (CSW), May, 2019.
Zhang, Y., A. Mauze, and J. S. Speck, "Anisotropic etching of β-Ga2O3 using hot phosphoric acid", Applied Physics Letters, vol. 115, pp. 013501, 2019.
Hilfiker, M., U. Kilic, A. Mock, V. Darakchieva, S. Knight, R. Korlacki, A. Mauze, Y. Zhang, J. Speck, and M. Schubert, "Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic β-(AlxGa1–x)2O3 (x ≤ 0.21) films", Applied Physics Letters, vol. 114, pp. 231901, 2019.
Hilfiker, M., U. Kilic, A. Mock, V. Darakchieva, S. Knight, R. Korlacki, A. Mauze, Y. Zhang, J. Speck, and M. Schubert, "Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic β-(AlxGa1–x)2O3 (x ≤ 0.21) films", Applied Physics Letters, vol. 114, pp. 231901, 2019.
Myers, D. J., K. Gel, A. I. Alhassan, L. Martinelli, J. Peretti, S. Nakamura, C. Weisbuch, and J. S. Speck, "Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop", Phys. Rev. B, vol. 100, pp. 125303, Sep, 2019.
Myers, D. J., K. Gel, A. I. Alhassan, L. Martinelli, J. Peretti, S. Nakamura, C. Weisbuch, and J. S. Speck, "Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop", Phys. Rev. B, vol. 100, pp. 125303, Sep, 2019.
Sayed, I., B. Bonef, W. Liu, S. Chan, J. Georgieva, J. S. Speck, S. Keller, and U. K. Mishra, "Electrical properties and interface abruptness of AlSiO gate dielectric grown on 0001 ¯ N-polar and (0001) Ga-polar GaN", Applied Physics Letters, vol. 115, pp. 172104, 2019.
Espenlaub, A. C., D. J. Myers, E. C. Young, S. Marcinkevičius, C. Weisbuch, and J. S. Speck, "Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs", Journal of Applied Physics, vol. 126, pp. 184502, 2019.

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