| Title | (010) β-Ga2O3 Metal Oxide Catalyzed Epitaxy (MOCATAXY) growth and Sn doping in plasma-assisted molecular beam epitaxy |
| Publication Type | Conference Paper |
| Year of Publication | 2019 |
| Authors | Mauze, A., Y. Zhang, and J. Speck |
| Conference Name | 2019 Compound Semiconductor Week (CSW) |
| Date Published | May |
| Keywords | catalysis, doping profiles, Ga fluxes, Ga2O3:Sn, gallium compounds, metal oxide catalyzed epitaxy growth, MOCATAXY growth, molecular beam epitaxial growth, plasma deposition, plasma-assisted molecular beam epitaxy, root mean squared roughness, size 0.12 nm, size 1.6 mum, Sn doping, surface morphology, surface roughness, thin film, tin |
| DOI | 10.1109/ICIPRM.2019.8819269 |
