Publications

Found 130 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Title is E  [Clear All Filters]
2011
Mayer, M. A., S. Choi, O. Bierwagen, H. M. Smith III, E. E. Haller, J. S. Speck, and W. Walukiewicz, "Electrical and optical properties of p-type InN", Journal of Applied Physics, vol. 110, no. 12: AIP, pp. 123707, 2011.
Bae, SY., DS. Lee, BH. Kong, HK. Cho, JF. Kaeding, S. Nakamura, SP. DenBaars, and JS. Speck, "Electroluminescence enhancement of (112\= 2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates", Current Applied Physics, vol. 11, no. 3: North-Holland, pp. 954–958, 2011.
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation, 2011.
Fujiwara, T., R. Yeluri, D. Denninghoff, J. Lu, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 096501, 2011.
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Enhancement-mode N-polar GaN metal–insulator–semiconductor field effect transistors with current gain cutoff frequency of 120 GHz", Applied physics express, vol. 4, no. 2: IOP Publishing, pp. 024103, 2011.
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz", Applied Physics Express, vol. 4, pp. 024103, 2011.
Singisetti, U., M. Hoi Wong, S. Dasgupta, B. Swenson, B. J. Thibeault, J. S. Speck, U. K. Mishra, and others, "Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth", IEEE Electron Device Letters, vol. 32, no. 2: IEEE, pp. 137–139, 2011.
Wong, MH., DF. Brown, ML. Schuette, H. Kim, V. Balasubramanian, W. Lu, JS. Speck, and UK. Mishra, "Erratum for ëX-band power performance of N-face GaN MIS-HEMTsí", Electronics Letters, vol. 47, no. 6: IET Digital Library, pp. 416–416, 2011.
Dasgupta, S., A. Raman, J. S. Speck, U. K. Mishra, and others, "Experimental demonstration of III-nitride hot-electron transistor with GaN base", IEEE Electron Device Letters, vol. 32, no. 9: IEEE, pp. 1212–1214, 2011.
Hu, Y-L., S. Kraemer, P. T. Fini, and J. S. Speck, "Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth", Journal of Crystal Growth, vol. 331, no. 1: Elsevier, pp. 49–55, 2011.
2010
Farrell, RM., DA. Haeger, X. Chen, M. Iza, A. Hirai, KM. Kelchner, K. Fujito, A. Chakraborty, S. Keller, SP. DenBaars, et al., "Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes", Journal of Crystal Growth, vol. 313, no. 1: Elsevier, pp. 1–7, 2010.
Arehart, AR., C. Poblenz, JS. Speck, and SA. Ringel, "Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy", Journal of Applied Physics, vol. 107, no. 5: AIP, pp. 054518, 2010.
Speck, J. S., B. A. Haskell, M. P Pattison, and T. J. Baker, Etching technique for the fabrication of thin (Al, In, Ga) N layers, 2010.
Gallinat, CS., G. Koblmüller, F. Wu, and JS. Speck, "Evaluation of threading dislocation densities in In-and N-face InN", Journal of Applied Physics, vol. 107, no. 5: AIP, pp. 053517, 2010.
2009
Letts, E. R., J. S. Speck, and S. Nakamura, "Effect of indium on the physical vapor transport growth of AlN", Journal of Crystal Growth, vol. 311, no. 4: Elsevier, pp. 1060–1064, 2009.
Miller, N., JW. Ager III, RE. Jones, HM. Smith III, MA. Mayer, KM. Yu, ME. Hawkridge, Z. Liliental-Weber, EE. Haller, W. Walukiewicz, et al., "Electrical and electrothermal transport in InN: The roles of defects", Physica B: Condensed Matter, vol. 404, no. 23-24: North-Holland, pp. 4862–4865, 2009.
Getty, A., E. Matioli, M. Iza, C. Weisbuch, and J. S. Speck, "Electroluminescent measurement of the internal quantum efficiency of light emitting diodes", Applied Physics Letters, vol. 94, no. 18: AIP, pp. 181102, 2009.
White, ME., O. Bierwagen, MY. Tsai, and JS. Speck, "Electron transport properties of antimony doped Sn O 2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 106, no. 9: AIP, pp. 093704, 2009.
Fujiwara, T., S. Rajan, S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors", Applied Physics Express, vol. 2, no. 1: IOP Publishing, pp. 011001, 2009.
Zhong, H., A. Tyagi, N. Pfaff, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Enhancing the light extraction efficiency of blue semipolar (1011) nitride-based light emitting diodes through surface patterning", Japanese Journal of Applied Physics, vol. 48, no. 3R: IOP Publishing, pp. 030201, 2009.
Saito, M., H. Yamada, K. Iso, H. Sato, H. Hirasawa, D. S. Kamber, T. Hashimoto, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Evaluation of GaN substrates grown in supercritical basic ammonia", Applied Physics Letters, vol. 94, no. 5: AIP, pp. 052109, 2009.
2008
Fehlberg, T. B., C. S. Gallinat, G. A. Umana-Membreno, G. Koblmüller, B. D. Nener, J. S. Speck, and G. Parish, "Effect of MBE growth conditions on multiple electron transport in InN", Journal of Electronic Materials, vol. 37, no. 5: Springer US, pp. 593–596, 2008.
Imer, B., B. Haskell, S. Rajan, S. Keller, U. K. Mishra, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Electrical characterization of low defect density nonpolar (11\= 2 0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)", Journal of Materials Research, vol. 23, no. 2: Cambridge University Press, pp. 551–555, 2008.
Gorczyca, I., J. Plesiewicz, L. Dmowski, T. Suski, N. Egede Christensen, A. Svane, CS. Gallinat, G. Koblmueller, and JS. Speck, "Electronic structure and effective masses of InN under pressure", Journal of Applied Physics, vol. 104, no. 1: AIP, pp. 013704, 2008.
Metcalfe, G. D., H. Shen, M. Wraback, A. Hirai, F. Wu, and J. S. Speck, "Enhanced terahertz radiation from high stacking fault density nonpolar GaN", Applied Physics Letters, vol. 92, no. 24: AIP, pp. 241106, 2008.

Pages