| Title | Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy |
| Publication Type | Journal Article |
| Year of Publication | 2010 |
| Authors | Arehart, AR., C. Poblenz, JS. Speck, and SA. Ringel |
| Journal | Journal of Applied Physics |
| Volume | 107 |
| Pagination | 054518 |