Publications
Found 20 results
Author Title Type [ Year
] Filters: Author is Mishra, Umesh K and First Letter Of Title is E [Clear All Filters]
, "Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime", Applied Physics Letters, vol. 104, no. 7: AIP, pp. 072107, 2014.
, "Estimation of hot electron relaxation time in gan using hot electron transistors", Applied Physics Express, vol. 6, no. 3: IOP Publishing, pp. 034002, 2013.
, "Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 26: AIP, pp. 262102, 2012.
, "Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica", physica status solidi (a), vol. 209, no. 3: WILEY-VCH Verlag Berlin, pp. 431–433, 2012.
, "Enhancement-mode m-plane AlGaN/GaN HFETs with regrown n+-GaN contact layer", physica status solidi (c), vol. 9, no. 3-4: Wiley Online Library, pp. 891–893, 2012.
, "Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $ g_ ${$m$}$ $, and 0.66-$$\backslash$Omega$\backslash$cdot$\backslash$hbox ${$mm$}$ $ $ R_ ${$$\backslash$rm on$}$ $", IEEE Electron Device Letters, vol. 33, no. 1: IEEE, pp. 26–28, 2012.
, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
, "Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors", Applied physics express, vol. 4, no. 2: IOP Publishing, pp. 024101, 2011.
, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 096501, 2011.
, "Enhancement-mode N-polar GaN metal–insulator–semiconductor field effect transistors with current gain cutoff frequency of 120 GHz", Applied physics express, vol. 4, no. 2: IOP Publishing, pp. 024103, 2011.
, "Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth", IEEE Electron Device Letters, vol. 32, no. 2: IEEE, pp. 137–139, 2011.
, "Experimental demonstration of III-nitride hot-electron transistor with GaN base", IEEE Electron Device Letters, vol. 32, no. 9: IEEE, pp. 1212–1214, 2011.
, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors", Applied Physics Express, vol. 2, no. 1: IOP Publishing, pp. 011001, 2009.
, "Electrical characterization of low defect density nonpolar (11\= 2 0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)", Journal of Materials Research, vol. 23, no. 2: Cambridge University Press, pp. 551–555, 2008.
, "Electrical and structural characterization of Mg-doped p-type Al 0.69 Ga 0.31 N films on SiC substrate", Journal of Applied Physics, vol. 101, no. 5: AIP, pp. 053717, 2007.
, "Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC", Japanese journal of applied physics, vol. 45, no. 3L: IOP Publishing, pp. L322, 2006.
, "Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates", Japanese journal of applied physics, vol. 44, no. 3L: IOP Publishing, pp. L405, 2005.
, "Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 14–19, 2000.
, "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.