| Title | Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire |
| Publication Type | Journal Article |
| Year of Publication | 1996 |
| Authors | Keller, S., D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. DenBaars |
| Journal | Japanese journal of applied physics |
| Volume | 35 |
| Pagination | L285 |