Publications
] , "Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method", Applied Physics Letters, vol. 91, no. 25: AIP, pp. 251911, 2007.
, "Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 102, no. 8: AIP, pp. 083546, 2007.
, "Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN", Applied Physics Letters, vol. 93, no. 17: AIP, pp. 171902, 2008.
, "Plasma-assisted molecular beam epitaxy and characterization of Sn O 2 (101) on r-plane sapphire", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 26, no. 5: AVS, pp. 1300–1307, 2008.
, "Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 9: AIP, pp. 093529, 2008.
, "Growth of high quality N-polar AlN (000 1) on Si (111) by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 94, no. 15: AIP, pp. 151906, 2009.
, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: AIP, pp. 091905, 2009.
, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: American Institute of Physics, pp. 091905–091905, 2009.
, "Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy", Applied Physics Letters, vol. 96, no. 10: AIP, pp. 102111, 2010.
, "Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition", Applied Physics Letters, vol. 97, no. 14: AIP, pp. 142109, 2010.
, "Misfit dislocation formation at heterointerfaces in (Al, In) GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates", Journal of Applied Physics, vol. 109, no. 3: AIP, pp. 033505, 2011.
, "Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic g m of 1105 mS/mm", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 279–280, 2011.
, "Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy", Journal of Applied Physics, vol. 112, no. 5: AIP, pp. 054903, 2012.
, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices", Semiconductor Science and Technology, vol. 27, no. 2: IOP Publishing, pp. 024001, 2012.
, "Metalorganic chemical vapor deposition of Al 2 O 3 using trimethylaluminum and O 2 precursors: Growth mechanism and crystallinity", Journal of Crystal Growth, vol. 408: Elsevier, pp. 78–84, 2014.
, "Plasma assisted molecular beam epitaxy of GaN with growth rates> 2.6 μm/h", Journal of Crystal Growth, vol. 386: Elsevier, pp. 168–174, 2014.
, "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 119, no. 1: AIP Publishing, pp. 015303, 2016.
, "Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes", Applied Physics Letters, vol. 108, no. 6: AIP Publishing, pp. 061105, 2016.