Misfit dislocation formation at heterointerfaces in (Al, In) GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates

TitleMisfit dislocation formation at heterointerfaces in (Al, In) GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates
Publication TypeJournal Article
Year of Publication2011
AuthorsWu, F., A. Tyagi, EC. Young, AE. Romanov, K. Fujito, SP. DenBaars, S. Nakamura, and JS. Speck
JournalJournal of Applied Physics
Volume109
Pagination033505