Growth of high quality N-polar AlN (000 1) on Si (111) by plasma assisted molecular beam epitaxy

TitleGrowth of high quality N-polar AlN (000 1) on Si (111) by plasma assisted molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2009
AuthorsDasgupta, S., F. Wu, JS. Speck, and UK. Mishra
JournalApplied Physics Letters
Volume94
Pagination151906