| Title | Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors |
| Publication Type | Journal Article |
| Year of Publication | 2008 |
| Authors | Corrion, AL., C. Poblenz, F. Wu, and JS. Speck |
| Journal | Journal of Applied Physics |
| Volume | 103 |
| Pagination | 093529 |