| Title | Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy |
| Publication Type | Journal Article |
| Year of Publication | 2010 |
| Authors | Law, JJM., ET. Yu, G. Koblmüller, F. Wu, and JS. Speck |
| Journal | Applied Physics Letters |
| Volume | 96 |
| Pagination | 102111 |