| Title | Plasma assisted molecular beam epitaxy of GaN with growth rates> 2.6 μm/h |
| Publication Type | Journal Article |
| Year of Publication | 2014 |
| Authors | McSkimming, B. M., F. Wu, T. Huault, C. Chaix, and J. S. Speck |
| Journal | Journal of Crystal Growth |
| Volume | 386 |
| Pagination | 168–174 |