Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

TitleProperties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition
Publication TypeJournal Article
Year of Publication2010
AuthorsKeller, S., Y. Dora, F. Wu, X. Chen, S. Chowdury, SP. DenBaars, JS. Speck, and UK. Mishra
JournalApplied Physics Letters
Volume97
Pagination142109