Publications
] , "Ballistic Electron Emission Microscopy Study of Individual Threading Dislocations in GaN", APS Meeting Abstracts, 2001.
, "Capture Kinetics of Electron Traps in MBE-Grown n-GaN", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 309–313, 2001.
, "Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy", Physical review letters, vol. 87, no. 10: APS, pp. 106802, 2001.
, "Condensed Matter: Electronic Properties, etc.-Characterization of Individual Threading Dislocations in GaN Using Ballistic Electron Emission Microscopy", Physical Review Letters, vol. 87, no. 10: [Woodbury, NY, etc.] American Physical Society., pp. 106802–106802, 2001.
, "Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 233, no. 4: North-Holland, pp. 709–716, 2001.
, "Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy", Applied Physics Letters, vol. 79, no. 17: AIP, pp. 2749–2751, 2001.
, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Excitons-Radiative and Nonradiative Exciton", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 485–488, 2001.
, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 1)-Point defects and impurities in GaN-Capture Kinetics", Physica Status Solidi-B-Basic Research, vol. 228, no. 1: Berlin: Akademie-Verlag, 1971-, pp. 309–314, 2001.
, "Radiative and nonradiative exciton lifetimes in GaN grown by molecular beam epitaxy", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 485–488, 2001.
, "Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates", Applied physics letters, vol. 81, no. 1: AIP, pp. 79–81, 2002.
, "Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy", Applied physics letters, vol. 80, no. 5: AIP, pp. 805–807, 2002.
, "Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN", Journal of crystal growth, vol. 234, no. 4: North-Holland, pp. 623–630, 2002.
, "The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 246, no. 1-2: North-Holland, pp. 55–63, 2002.
, "Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
, "Effect of AlN nucleation layer growth conditions on buffer leakage in Al Ga N/ Ga N high electron mobility transistors grown by molecular beam epitaxy (MBE)", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 4: AVS, pp. 1562–1567, 2005.