Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

TitleInfluence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2001
AuthorsElsass, CR., C. Poblenz, B. Heying, P. Fini, PM. Petroff, SP. DenBaars, UK. Mishra, and JS. Speck
JournalJournal of crystal growth
Volume233
Pagination709–716