Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

TitleImpact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy
Publication TypeJournal Article
Year of Publication2002
AuthorsHierro, A., AR. Arehart, B. Heying, M. Hansen, UK. Mishra, SP. DenBaars, JS. Speck, and SA. Ringel
JournalApplied physics letters
Volume80
Pagination805–807