The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy

TitleThe role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2002
AuthorsHaus, E., IP. Smorchkova, B. Heying, P. Fini, C. Poblenz, T. Mates, UK. Mishra, and JS. Speck
JournalJournal of crystal growth
Volume246
Pagination55–63