Effect of AlN nucleation layer growth conditions on buffer leakage in Al Ga N/ Ga N high electron mobility transistors grown by molecular beam epitaxy (MBE)

TitleEffect of AlN nucleation layer growth conditions on buffer leakage in Al Ga N/ Ga N high electron mobility transistors grown by molecular beam epitaxy (MBE)
Publication TypeJournal Article
Year of Publication2005
AuthorsPoblenz, C., P. Waltereit, S. Rajan, UK. Mishra, JS. Speck, P. Chin, I. Smorchkova, and B. Heying
JournalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Volume23
Pagination1562–1567