Publications
Found 215 results
Author Title Type [ Year
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, "Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN", physica status solidi (b), vol. 228, no. 3: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 937–946, 2001.
, "Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors", journal of Applied Physics, vol. 89, no. 12: AIP, pp. 7846–7851, 2001.
, "Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors", journal of Applied Physics, vol. 89, no. 12: AIP, pp. 7846–7851, 2001.
, "AlGaN-GaN HEMTs and HBTs for microwave power", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 35–36, 2000.
, "Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Applied Physics Letters, vol. 76, no. 5: AIP, pp. 529–531, 2000.
, "Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 8–13, 2000.
, "In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN", Applied Physics Letters, vol. 76, no. 26: AIP, pp. 3893–3895, 2000.
, "LASERS, OPTICS, AND OPTOELECTRONICS-Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Applied Physics Letters, vol. 76, no. 5: New York [etc.] American Institute of Physics., pp. 529–531, 2000.
, Measurement and minimization of wing tilt in laterally overgrown GaN on a SiO ${$sub 2$}$ mask.: Argonne National Lab., IL (US), 2000.
, "Polarity determination for MOCVD growth of GaN on Si (111) by convergent beam electron diffraction", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 104–110, 2000.
, Polarity determination for MOCVD growth of GaN on Si (111) by convergent beam electron diffraction [Metal Organic Chemical Vapor Deposition]: Univ. of California, Santa Barbara, CA (US), 2000.
, "Strain relaxation in InGaAs lattice engineered substrates", Journal of Electronic Materials, vol. 29, no. 7: Springer-Verlag, pp. 944–949, 2000.
, "Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy", Journal of Electronic Materials, vol. 29, no. 6: Springer-Verlag, pp. 732–735, 2000.
, "Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride", Applied physics letters, vol. 74, no. 14: AIP, pp. 2035–2037, 1999.
, "Extended defect reduction in GaN laterally overgrown on Si (111)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 833–836, 1999.
, "Extended defect reduction in GaN laterally overgrown on Si (111)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 833–836, 1999.
, "Growth of High Quality Epitaxial GaN Thin Films", WULI-BEIJING-, vol. 28: UNKNOWN, pp. 44–50, 1999.
, "High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers", Applied physics letters, vol. 75, no. 12: AIP, pp. 1706–1708, 1999.
, "Maskless lateral epitaxial overgrowth of GaN on sapphire", MRS Online Proceedings Library Archive, vol. 572: Cambridge University Press, 1999.
, "Measurement of crystallographic tilt in the lateral epitaxial overgrowth of GaN", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1044, 1999.
, "Strain relaxation in InxGa1-xAs lattice engineered substrates", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1050–1051, 1999.
, "Strain relaxation of In x Ga 1- x As during lateral oxidation of underlying AlAs layers", Applied physics letters, vol. 75, no. 15: AIP, pp. 2253–2255, 1999.
, "Strain relaxation of In x Ga 1- x As during lateral oxidation of underlying AlAs layers", Applied physics letters, vol. 75, no. 15: AIP, pp. 2253–2255, 1999.
, "Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 4, no. 1: Cambridge University Press, 1999.
, "Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 4, no. 1: Cambridge University Press, 1999.