LASERS, OPTICS, AND OPTOELECTRONICS-Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire

TitleLASERS, OPTICS, AND OPTOELECTRONICS-Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire
Publication TypeJournal Article
Year of Publication2000
AuthorsHansen, M., P. Fini, L. Zhao, AC. Abare, LA. Coldren, JS. Speck, and SP. DenBaars
JournalApplied Physics Letters
Volume76
Pagination529–531