| Title | Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire |
| Publication Type | Journal Article |
| Year of Publication | 2000 |
| Authors | Hansen, M., P. Fini, L. Zhao, AC. Abare, LA. Coldren, JS. Speck, and SP. DenBaars |
| Journal | Applied Physics Letters |
| Volume | 76 |
| Pagination | 529–531 |