Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer

TitleStructural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer
Publication TypeJournal Article
Year of Publication1999
AuthorsMarchand, H., N. Zhang, L. Zhao, Y. Golan, SJ. Rosner, G. Girolami, P. T. Fini, JP. Ibbetson, S. Keller, S. DenBaars, and others
JournalMaterials Research Society Internet Journal of Nitride Semiconductor Research
Volume4