| Title | Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire |
| Publication Type | Journal Article |
| Year of Publication | 2000 |
| Authors | Hansen, M., P. Fini, L. Zhao, A. Abare, L. A. Coldren, J. S. Speck, and S. P. DenBaars |
| Journal | Materials Research Society Internet Journal of Nitride Semiconductor Research |
| Volume | 5 |
| Pagination | 8–13 |