Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors

TitleMetalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors
Publication TypeJournal Article
Year of Publication2001
AuthorsMarchand, H., L. Zhao, N. Zhang, B. Moran, R. Coffie, UK. Mishra, JS. Speck, SP. DenBaars, and JA. Freitas
Journaljournal of Applied Physics
Volume89
Pagination7846–7851