Publications

Found 632 results
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2023
Yao, Y., H. Li, M. Wang, P. Li, M. Lam, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization", Optics Express, vol. 31, issue 18, pp. 28649-28657, 2023.
Wong, M. S., A. Raj, H-M. Chang, V. Rienzi, F. Wu, J. J. Ewing, E. S. Trageser, S. Gee, N. C. Palmquist, P. Chan, et al., "Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges", AIP Advances, vol. 13, 01, 2023.
Wong, M. S., A. Raj, H-M. Chang, V. Rienzi, F. Wu, J. J. Ewing, E. S. Trageser, S. Gee, N. C. Palmquist, P. Chan, et al., "Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges", AIP Advances, vol. 13, 01, 2023.
Li, P., H. Li, Y. Yang, M. S. Wong, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, and S. P. DenBaars, "InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%", Applied Physics Express, 2023.
Tak, T., C. W. Johnson, W. Ying Ho, F. Wu, M. Sauty, S. Rebollo, A. K. Schmid, J. Peretti, Y-R. Wu, C. Weisbuch, et al., "Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy", Physical Review Applied, vol. 20, issue 6, 2023.
Tak, T., C. W. Johnson, W. Ying Ho, F. Wu, M. Sauty, S. Rebollo, A. K. Schmid, J. Peretti, Y-R. Wu, C. Weisbuch, et al., "Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy", Physical Review Applied, vol. 20, issue 6, 2023.
Tak, T., C. W. Johnson, W. Ying Ho, F. Wu, M. Sauty, S. Rebollo, A. K. Schmid, J. Peretti, Y-R. Wu, C. Weisbuch, et al., "Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy", Physical Review Applied, vol. 20, issue 6, 2023.
Chow, Y. C., C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers", Journal of Applied Physics, vol. 133, 04, 2023.
Cadena, R. M., D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, et al., "Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes", IEEE Transactions on Nuclear Science, vol. 70, pp. 363-369, 2023.
Ho, W. Ying, Y. Chao Chow, S. Nakamura, J. Peretti, C. Weisbuch, and J. S. Speck, "Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)", Applied Physics Letters, vol. 122, 2023.
Wong, M. S., H. Zhang, E. S. Trageser, R. M. Anderson, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Chow, Y. Chao, T. Tak, F. Wu, J. Ewing, S. Nakamura, S. P. DenBaars, Y. Ren Wu, C. Weisbuch, and J. S. Speck, "Origins of the high-energy electroluminescence peaks in long-wavelength (~ 495-685 nm) InGaN light-emitting diodes", Applied Physics Letters, vol. 123, issue 9, 2023.
Chow, Y. Chao, T. Tak, F. Wu, J. Ewing, S. Nakamura, S. P. DenBaars, Y. Ren Wu, C. Weisbuch, and J. S. Speck, "Origins of the high-energy electroluminescence peaks in long-wavelength (~ 495-685 nm) InGaN light-emitting diodes", Applied Physics Letters, vol. 123, issue 9, 2023.
Chow, Y. Chao, T. Tak, F. Wu, J. Ewing, S. Nakamura, S. P. DenBaars, Y. Ren Wu, C. Weisbuch, and J. S. Speck, "Origins of the high-energy electroluminescence peaks in long-wavelength (~ 495-685 nm) InGaN light-emitting diodes", Applied Physics Letters, vol. 123, issue 9, 2023.
Sauty, M., N. Alyabyeva, C. Lynsky, Y. Chao Chow, S. Nakamura, J. S. Speck, Y. Lassailly, A. C. H. Rowe, C. Weisbuch, and J. Peretti, "Probing Local Emission Properties in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Microscopy", physica status solidi (b), vol. 260, pp. 2200365, 2023.
Wong, M. S., R. C. White, S. Gee, T. Tak, S. Gandrothula, H. Choi, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments", Applied Physics Express, vol. 16, issue 6, 2023.
Wong, M. S., R. C. White, S. Gee, T. Tak, S. Gandrothula, H. Choi, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments", Applied Physics Express, vol. 16, issue 6, 2023.
Li, P., H. Li, Y. Yao, N. Lim, M. Wong, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%", ACS Photonics, pp. null, 2023.
Ho, W. Ying, C. W. Johnson, T. Tak, M. Sauty, Y. Chao Chow, S. Nakamura, A. Schmid, J. Peretti, C. Weisbuch, and J. S. Speck, "Steady-state junction current distribution in pn GaN diodes measured using low-energy electron microscopy (LEEM)", Applied Physics Letters, vol. 123, issue 3, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01/2023.
Hendricks, N. S., E. Farzana, A. E. Islam, K. D. Leedy, K. J. Liddy, J. Williams, D. M. Dryden, A. M. Adams, J. S. Speck, K. D. Chabak, et al., "Vertical metal-dielectric-semiconductor diode on (001) Beta-Ga2O3 with high-k TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown", Applied Physics Express, vol. 16, issue 7, 2023.

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