Publications
Found 632 results
Author Title Type [ Year
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"Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 4: AVS, pp. 1379–1385, 2005.
, "Al Ga N/ Ga N metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 5: AVS, pp. 2479–2485, 2004.
, "Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia", MRS Online Proceedings Library Archive, vol. 831: Cambridge University Press, 2004.
, "Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy", Applied physics letters, vol. 84, no. 4: AIP, pp. 535–537, 2004.
, "Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%", Applied physics letters, vol. 84, no. 15: AIP, pp. 2748–2750, 2004.
, "Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing", Applied physics letters, vol. 85, no. 22: AIP, pp. 5254–5256, 2004.
, "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 3: AVS, pp. 1145–1149, 2004.
, "Effect of nitridation on polarity, microstructure, and morphology of AlN films", Applied physics letters, vol. 84, no. 6: AIP, pp. 912–914, 2004.
, "Erratum: Nonpolar In x Ga 1- x N/G a N (1 1\= 0 0) multiple quantum wells grown on γ- L i A l O 2 (100) by plasma-assisted molecular-beam epitaxy [Phys. Rev. B 67, 041306 (R)(2003)]", Physical Review B, vol. 69, no. 12: APS, pp. 129902, 2004.
, "GaN quantum dot density control by rf-plasma molecular beam epitaxy", Applied physics letters, vol. 84, no. 5: AIP, pp. 690–692, 2004.
, "Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes", Journal of crystal growth, vol. 272, no. 1-4: North-Holland, pp. 257–263, 2004.
, "Maskless lateral epitaxial overgrowth of high-aluminum-content Al x Ga 1- x N", Applied physics letters, vol. 84, no. 24: AIP, pp. 5025–5027, 2004.
, "Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 8: AIP, pp. 1281–1283, 2004.
, "Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE", IEEE Electron Device Letters, vol. 25, no. 5: IEEE, pp. 247–249, 2004.
, "Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer", Journal of Crystal Growth, vol. 273, no. 1-2: North-Holland, pp. 38–47, 2004.
, "Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors", Japanese journal of applied physics, vol. 43, no. 12A: IOP Publishing, pp. L1520, 2004.
, "Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors", Japanese journal of applied physics, vol. 43, no. 12A: IOP Publishing, pp. L1520, 2004.
, "Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells", Applied physics letters, vol. 84, no. 4: AIP, pp. 496–498, 2004.
, "Blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy", physica status solidi (c), no. 7: Wiley Online Library, pp. 2193–2197, 2003.
, "Characterization of a-plane GaN/(Al, Ga) N multiple quantum wells grown via metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 42, no. 3A: IOP Publishing, pp. L235, 2003.
, "Characterization of a-plane GaN/(Al, Ga) N multiple quantum wells grown via metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 42, no. 3A: IOP Publishing, pp. L235, 2003.
, "Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride", Journal of applied physics, vol. 94, no. 3: AIP, pp. 1448–1453, 2003.
, "Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy", Applied physics letters, vol. 83, no. 4: AIP, pp. 644–646, 2003.
, "Defect Structure of Mg-Doped GaN Nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 344–345, 2003.
, "Dislocation-free GaN nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 342–343, 2003.
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