| Title | Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors |
| Publication Type | Journal Article |
| Year of Publication | 2004 |
| Authors | Waltereit, P., C. Poblenz, S. Rajan, F. Wu, U. K. Mishra, and J. S. Speck |
| Journal | Japanese journal of applied physics |
| Volume | 43 |
| Pagination | L1520 |