Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors

TitleStructural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors
Publication TypeJournal Article
Year of Publication2004
AuthorsWaltereit, P., C. Poblenz, S. Rajan, F. Wu, U. K. Mishra, and J. S. Speck
JournalJapanese journal of applied physics
Volume43
PaginationL1520