| Title | Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors |
| Publication Type | Journal Article |
| Year of Publication | 2004 |
| Authors | Poblenz, C., P. Waltereit, S. Rajan, S. Heikman, UK. Mishra, and JS. Speck |
| Journal | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena |
| Volume | 22 |
| Pagination | 1145–1149 |