Publications
Found 2098 results
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, "Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN", Physical Review B, vol. 84, no. 7: APS, pp. 075315, 2011.
, "Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN", Physical Review B, vol. 84, no. 7: APS, pp. 075315, 2011.
, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
, "Effect of n-AlGaN cleave assistance layers on the morphology of c-plane cleaved facets for m-plane InGaN/GaN laser diodes", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2226–2228, 2011.
, "Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors", Applied physics express, vol. 4, no. 2: IOP Publishing, pp. 024101, 2011.
, "Electrical and optical properties of p-type InN", Journal of Applied Physics, vol. 110, no. 12: AIP, pp. 123707, 2011.
, "Electroluminescence enhancement of (112\= 2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates", Current Applied Physics, vol. 11, no. 3: North-Holland, pp. 954–958, 2011.
, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 096501, 2011.
, "Enhancement-mode N-polar GaN metal–insulator–semiconductor field effect transistors with current gain cutoff frequency of 120 GHz", Applied physics express, vol. 4, no. 2: IOP Publishing, pp. 024103, 2011.
, "Enhancement-mode N-polar GaN metal–insulator–semiconductor field effect transistors with current gain cutoff frequency of 120 GHz", Applied physics express, vol. 4, no. 2: IOP Publishing, pp. 024103, 2011.
, "Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz", Applied Physics Express, vol. 4, pp. 024103, 2011.
, "Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz", Applied Physics Express, vol. 4, pp. 024103, 2011.
, "Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth", IEEE Electron Device Letters, vol. 32, no. 2: IEEE, pp. 137–139, 2011.
, "Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth", IEEE Electron Device Letters, vol. 32, no. 2: IEEE, pp. 137–139, 2011.
, "Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth", IEEE Electron Device Letters, vol. 32, no. 2: IEEE, pp. 137–139, 2011.
, "Erratum for ëX-band power performance of N-face GaN MIS-HEMTsí", Electronics Letters, vol. 47, no. 6: IET Digital Library, pp. 416–416, 2011.
, "Erratum for ëX-band power performance of N-face GaN MIS-HEMTsí", Electronics Letters, vol. 47, no. 6: IET Digital Library, pp. 416–416, 2011.
, "Experimental demonstration of III-nitride hot-electron transistor with GaN base", IEEE Electron Device Letters, vol. 32, no. 9: IEEE, pp. 1212–1214, 2011.
, "Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth", Journal of Crystal Growth, vol. 331, no. 1: Elsevier, pp. 49–55, 2011.
, "Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2086–2088, 2011.