Publications
Found 279 results
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, "T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art f MAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs", Device Research Conference (DRC), 2010: IEEE, pp. 155–156, 2010.
, "Thermopower of parallel conducting structures", APS March Meeting Abstracts, 2010.
, "AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-type AlGaN etch stop layers", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 092105, 2011.
, "Blue InGaN/GaN laser diodes grown on (33$$\backslash$bar 3$\backslash$bar 1$) free-standing GaN substrates", physica status solidi (c), vol. 8, no. 7-8: WILEY-VCH Verlag, pp. 2390–2392, 2011.
, "Blue InGaN/GaN laser diodes grown on (33$$\backslash$bar 3$\backslash$bar 1$) free-standing GaN substrates", physica status solidi (c), vol. 8, no. 7-8: WILEY-VCH Verlag, pp. 2390–2392, 2011.
, "Effect of n-AlGaN cleave assistance layers on the morphology of c-plane cleaved facets for m-plane InGaN/GaN laser diodes", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2226–2228, 2011.
, "Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth", IEEE Electron Device Letters, vol. 32, no. 2: IEEE, pp. 137–139, 2011.
, "Experimental demonstration of III-nitride hot-electron transistor with GaN base", IEEE Electron Device Letters, vol. 32, no. 9: IEEE, pp. 1212–1214, 2011.
, "Growth, structural, and electrical characterizations of N-polar InAlN by plasma-assisted molecular beam epitaxy", Applied physics express, vol. 4, no. 4: IOP Publishing, pp. 045502, 2011.
, "High internal and external quantum efficiency InGaN/GaN solar cells", Applied Physics Letters, vol. 98, no. 2: AIP, pp. 021102, 2011.
, "High optical polarization ratio from semipolar (20 2\= 1\=) blue-green InGaN/GaN light-emitting diodes", Applied physics letters, vol. 99, no. 5: AIP, pp. 051109, 2011.
, "High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates", Gallium Nitride Materials and Devices Vi, vol. 7939: International Society for Optics and Photonics, pp. 79390Y, 2011.
, "High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates", Laser Technology for Defense and Security VII, vol. 8039: International Society for Optics and Photonics, pp. 80390D, 2011.
, "InGaN-Based Solar Cells for Ultrahigh Efficiency Multijunction Solar Cell Applications", UC Solar Symposlum, 2011.
, "N-Polar GaN/AlN MIS-HEMT With $ f_ ${$$\backslash$rm MAX$}$ $ of 204 GHz for Ka-Band Applications", IEEE Electron Device Letters, vol. 32, no. 12: IEEE, pp. 1683–1685, 2011.
, "Scaling behavior and velocity enhancement in self-aligned N-polar GaN/AlGaN HEMTs with maximum fT of 163 GHz", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 141–142, 2011.
, "Self-aligned technology for N-polar GaN/Al (Ga) N MIS-HEMTs", IEEE Electron Device Letters, vol. 32, no. 1: IEEE, pp. 33–35, 2011.
, Stefan Hildebrandt Ingeborg Stass: Wiley Online Library, 2011.
, "Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 20: AIP, pp. 203501, 2011.
, "Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic g m of 1105 mS/mm", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 279–280, 2011.
, "XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO 2 (101) thin films", Applied Physics Letters, vol. 98, no. 23: AIP, pp. 232107, 2011.
, "384 nm laser diode grown on a (20 2\= 1) semipolar relaxed AlGaN buffer layer", Applied Physics Letters, vol. 100, no. 16: AIP, pp. 161107, 2012.