384 nm laser diode grown on a (20 2\= 1) semipolar relaxed AlGaN buffer layer

Title384 nm laser diode grown on a (20 2\= 1) semipolar relaxed AlGaN buffer layer
Publication TypeJournal Article
Year of Publication2012
AuthorsHaeger, D. A., E. C. Young, R. B. Chung, F. Wu, N. A. Pfaff, M. Tsai, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura, and others
JournalApplied Physics Letters
Volume100
Pagination161107