Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors

TitleTemperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors
Publication TypeJournal Article
Year of Publication2011
AuthorsRoy, T., EX. Zhang, YS. Puzyrev, X. Shen, DM. Fleetwood, RD. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, and others
JournalApplied Physics Letters
Volume99
Pagination203501