Publications
Found 57 results
Author Title Type [ Year
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, "Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy", Physical Review Applied, vol. 20, issue 6, 2023.
, "Steady-state junction current distribution in pn GaN diodes measured using low-energy electron microscopy (LEEM)", Applied Physics Letters, vol. 123, issue 3, 2023.
, "Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 119, 11, 2021.
, "High nitrogen flux plasma-assisted molecular beam epitaxy growth of InxGa1-xN films", Journal of Crystal Growth, vol. 546, pp. 125738, 2020.
, "Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy", IEEE Electron Device Letters, vol. 41, pp. 1806-1809, 2020.
, "Plasma-Assisted Molecular Beam Epitaxy 1", Gallium Oxide, vol. 293: Springer, Cham, 2020.
, "InxGa1-xN Alloys Grown by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) with Growth Rates Up to 1.3 μm/hr", 2019 Compound Semiconductor Week (CSW), May, 2019.
, "Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN", Journal of Applied Physics, vol. 126, pp. 045712, 2019.
, "Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies", Journal of Applied Physics, vol. 124, pp. 145703, 2018.
, "Donors and deep acceptors in β-Ga2O3", Applied Physics Letters, vol. 113, pp. 062101, 2018.
, "Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 18, pp. 364-376, Sept, 2018.
, "Impact of Surface Treatment on Interface States of ALD Al2O3/GaN Interfaces", ECS Journal of Solid State Science and Technology, vol. 6, no. 8: The Electrochemical Society, pp. P489–P494, 2017.
, "Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 64, no. 1: IEEE, pp. 218–225, 2017.
, "Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 109, no. 2: AIP Publishing, pp. 023511, 2016.
, "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 119, no. 1: AIP Publishing, pp. 015303, 2016.
, "Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs", Radiation and Its Effects on Components and Systems (RADECS), 2016 16th European Conference on: IEEE, pp. 1–4, 2016.
, "2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system", Optics express, vol. 23, no. 23: Optical Society of America, pp. 29779–29787, 2015.
, "Direct Determination of Energy Band Alignments of Ni/Al 2 O 3/GaN MOS Structures Using Internal Photoemission Spectroscopy", Journal of electronic materials, vol. 43, no. 4: Springer US, pp. 828–832, 2014.
, "Optical gain and absorption of 420 nm InGaN-based laser diodes grown on m-plane GaN substrate", Asia Communications and Photonics Conference: Optical Society of America, pp. AW4A–1, 2014.
, "Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies", Journal of Applied Physics, vol. 113, no. 20: AIP, pp. 204505, 2013.
, "Double embedded photonic crystals for extraction of guided light in light-emitting diodes", Applied Physics Letters, vol. 100, no. 17: AIP, pp. 171105, 2012.