Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies

TitleInterface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies
Publication TypeJournal Article
Year of Publication2013
AuthorsJackson, C. M., A. R. Arehart, E. Cinkilic, B. McSkimming, J. S. Speck, and S. A. Ringel
JournalJournal of Applied Physics
Volume113
Pagination204505