Publications

Found 333 results
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2010
Hurni, C. A., O. Bierwagen, J. R. Lang, B. M. McSkimming, C. S. Gallinat, E. C. Young, D. A. Browne, U. K. Mishra, and J. S. Speck, "pn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents", Applied Physics Letters, vol. 97, no. 22: AIP, pp. 222113, 2010.
Ben-Yaacov, T., T. Ive, C. G. Van de Walle, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Properties of In-doped ZnO films grown by metalorganic chemical vapor deposition on GaN (0001) templates", Journal of electronic materials, vol. 39, no. 5: Springer US, pp. 608–611, 2010.
Nagata, T., O. Bierwagen, M. E. White, M-Y. Tsai, and J. S. Speck, "Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO 2 (101) thin films", Journal of Applied Physics, vol. 107, no. 3: AIP, pp. 033707, 2010.
White, M. E., O. Bierwagen, M-Y. Tsai, and J. S. Speck, "Synthesis and characterization of highly resistive epitaxial indium-doped SnO2", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 051101, 2010.
Baker, T. J., B. A. Haskell, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Technique for the growth of planar semi-polar gallium nitride, 2010.
Dasgupta, S., D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others, "T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art f MAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs", Device Research Conference (DRC), 2010: IEEE, pp. 155–156, 2010.
Dasgupta, S., Nidhi, D. F. Brown, F. Wu, S. Keller, J. S. Speck, and U. K. Mishra, "Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth", Applied physics letters, vol. 96, no. 14: AIP, pp. 143504, 2010.
Tsai, M-Y., O. Bierwagen, M. E. White, and J. S. Speck, "β-Ga 2 O 3 growth by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 28, no. 2: AVS, pp. 354–359, 2010.
2011
Bryant, B. N., D. S. Kamber, F. Wu, S. Nakamura, and J. S. Speck, "Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy", physica status solidi (c), vol. 8, no. 5: Wiley Online Library, pp. 1463–1466, 2011.
Pfüller, C., O. Brandt, T. Flissikowski, HT. Grahn, T. Ive, JS. Speck, and SP. DenBaars, "Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires", Applied Physics Letters, vol. 98, no. 11: AIP, pp. 113113, 2011.
Bierwagen, O., J. S. Speck, T. Nagata, T. Chikyow, Y. Yamashita, H. Yoshikawa, and K. Kobayashi, "Depletion of the In 2 O 3 (001) and (111) surface electron accumulation by an oxygen plasma surface treatment", Applied Physics Letters, vol. 98, no. 17: AIP, pp. 172101, 2011.
Mayer, M. A., S. Choi, O. Bierwagen, H. M. Smith III, E. E. Haller, J. S. Speck, and W. Walukiewicz, "Electrical and optical properties of p-type InN", Journal of Applied Physics, vol. 110, no. 12: AIP, pp. 123707, 2011.
Bae, SY., DS. Lee, BH. Kong, HK. Cho, JF. Kaeding, S. Nakamura, SP. DenBaars, and JS. Speck, "Electroluminescence enhancement of (112\= 2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates", Current Applied Physics, vol. 11, no. 3: North-Holland, pp. 954–958, 2011.
Wong, MH., DF. Brown, ML. Schuette, H. Kim, V. Balasubramanian, W. Lu, JS. Speck, and UK. Mishra, "Erratum for ëX-band power performance of N-face GaN MIS-HEMTsí", Electronics Letters, vol. 47, no. 6: IET Digital Library, pp. 416–416, 2011.
Wong, MH., DF. Brown, ML. Schuette, H. Kim, V. Balasubramanian, W. Lu, JS. Speck, and UK. Mishra, "Erratum for ëX-band power performance of N-face GaN MIS-HEMTsí", Electronics Letters, vol. 47, no. 6: IET Digital Library, pp. 416–416, 2011.
Bierwagen, O., S. Choi, and J. S. Speck, "Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN", Physical Review B, vol. 84, no. 23: APS, pp. 235302, 2011.
Toledo, N. G., S. C. Cruz, C. J. Neufeld, J. R. Lang, M. A. Scarpulla, T. Buehl, A. C. Gossard, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Integrated non-III-nitride/III-nitride tandem solar cell", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 265–266, 2011.
Browne, D., E. Young, and J. Speck, "Investigation of Indium and Impurity Incorporation of InGaN Films on Polar, Nonpolar, and Semipolar GaN Orientations Grown by Ammonia MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Hurni, C., P. Burke, J. Lang, B. McSkimming, E. Young, U. Mishra, and J. Speck, "Low temperature p-GaN grown by NH 3-MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Denninghoff, D., S. Dasgupta, J. Lu, D. Brown, S. Keller, J. Speck, and U. Mishra, "N-Polar GaN HEMTs Grown by MBE and MOCVD with fmax of 255 and 250 GHz, Respectively", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Denninghoff, DJ., S. Dasgupta, DF. Brown, S. Keller, J. Speck, and UK. Mishra, "N-polar GaN HEMTs with f max> 300 GHz using high-aspect-ratio T-gate design", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 269–270, 2011.
Denninghoff, D. J., S. Dasgupta, D. F. Brown, S. Keller, J. Speck, and U. K. Mishra, "N-polar GaN HEMTs with fmax>300 GHz using high-aspect-ratio T-gate design", 69th Device Research Conference, June, 2011.
Matioli, E., S. Brinkley, K. M. Kelchner, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, "Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals", Applied Physics Letters, vol. 98, no. 25: AIP, pp. 251112, 2011.
Brinkley, S. E., Y-. Da Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes", Applied Physics Letters, vol. 98, no. 1: AIP, pp. 011110, 2011.
Raring, JW., MC. Schmidt, C. Poblenz, Y. Lin, C. Bai, P. Rudy, JS. Speck, SP. DenBaars, and S. Nakamura, "Recent progress in InGaN-based laser diodes fabricated on nonpolar/semipolar substrates", Photonics Conference (PHO), 2011 IEEE: IEEE, pp. 503–504, 2011.

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